A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation

We present the latest results of our research regarding meshes suitable for both process and device simulation. Two major results are discussed in this paper: a consistent multi-dimensional mesh quality definition and a new hybrid multi-dimensional mesh generation approach. The consistent definition achieved is based on the conditions imposed by the Box integration method applied for both semiconductor process and device equations. The hybrid approach developed reaches a consistent mesh quality in all dimensions and it overcomes the severe limitations of our former mesh generators. Finally, it has been experimentally demonstrated that both the unified conditions and the hybrid approach are suitable for stable discretization schemes for device simulations based on the Box method. 1 Mesh quality required for device simulation When developing a multi-dimensional device simulation tool based on the Box method (e.g. DESSIS..SE [1]), a consistent definition of the required mesh quality in all three spatial dimensions has a strong influence on the selection of the appropriate meshing techniques. In the past, the 2D mesh quality requirements have been mainly expressed by nonobtuse angle conditions. These conditions have been regarded as necessary for a stable Box integration scheme. Different constraints on the maximum angle in the elements have been used as major arguments to justify different mesh generation tools and techniques for process and device simulation. On the other hand, the mesh quality requirements mentioned in the literature for 3D device simulation do not correspond to their 2D counterparts [2], In 2D, much stronger conditions have been imposed (not a single obtuse angle is allowed in the mesh), e.g in [3, 4]. Nevertheless, 3D device simulation has been successfully performed using weaker conditions, e.g. by using the Voronoi diagram of a Delaunay mesh.